Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
Författare
Summary, in English
We have investigated the electronic transport through 3 mu m long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I-V characteristic with significantly increased currents of up to 1 mu A at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier.
Publiceringsår
2013
Språk
Engelska
Sidor
4111-4118
Publikation/Tidskrift/Serie
ACS Nano
Volym
7
Issue
5
Dokumenttyp
Artikel i tidskrift
Förlag
The American Chemical Society (ACS)
Ämne
- Nano Technology
Nyckelord
- nanowires
- heterostructure
- InAs
- molecular electronics
- oligo(phenylene
- vinylene)
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1936-086X