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Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor

Publiceringsår: 2006
Språk: Engelska
Sidor: 1842-1846
Publikation/Tidskrift/Serie: Nano Letters
Volym: 6
Nummer: 9
Dokumenttyp: Artikel
Förlag: American Chemical Society


An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10 000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive. A single nanowire heterostructure transistor has a transconductance of 5 mu A/V at a low source-drain voltage of 0.3 V. For the homogeneous InAs transistor, we deduced a high electron mobility of 1500 cm(2)/Vs.



  • Physics and Astronomy


  • ISSN: 1530-6984

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