Webbläsaren som du använder stöds inte av denna webbplats. Alla versioner av Internet Explorer stöds inte längre, av oss eller Microsoft (läs mer här: * https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Var god och använd en modern webbläsare för att ta del av denna webbplats, som t.ex. nyaste versioner av Edge, Chrome, Firefox eller Safari osv.

A resonant tunneling permeable base transistor with Al-free tunneling barriers

In English

Författare

Summary, in English

Summary form only given. Resonant tunneling based devices are an intriguing set of devices with promising high speed, low power and high functionality capabilities. We have developed an technology to embed metallic features on the nm-scale inside a semiconductor. By combining such metallic features and heterostructures we have developed a new type of tunneling transistor, the so called Resonant Tunneling Permeable Base Transistor (RT-PBT), where a double barrier heterostructure is placed in close vicinity to a metal grating. A three step fabrication process is described

Publiceringsår

2002

Språk

Engelska

Sidor

155-156

Publikation/Tidskrift/Serie

Device Research Conference (Cat. No.02TH8606)

Dokumenttyp

Konferensbidrag

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Nyckelord

  • GaAsP/GaAs/GaAsP heterostructure
  • 20 to 100 GHz
  • double barrier heterostructure
  • metal grating
  • lift-off
  • Al-free tunneling barriers
  • resonant tunneling permeable base transistor
  • RT-PBT
  • resonant tunneling PBT
  • three step fabrication process
  • MOVPE
  • W features
  • electron beam lithography
  • GaAsP-GaAs-GaAsP
  • W

Conference name

Device Research Conference, 2002

Conference date

2002-06-24 - 2002-06-26

Conference place

Santa Barbara, CA, United States

Status

Published

ISBN/ISSN/Övrigt

  • ISBN: 0-7803-7317-0