Fabrication and Characterization of Ultra-Thin PIN Silicon Detectors for Counting the Passage of MeV Ions
Författare
Summary, in English
This paper describes the fabrication and initial characterization of an ultra-thin silicon PIN detector using a new technique in silicon nanotechnology. In collaboration with the Nuclear Physics Division and the Lund Nano Lab at Lund University, we have developed and manufactured ultra thin Delta E-detectors for spectroscopic applications. The fabrication process has been carried out using a double-polished silicon substrate n-type wafer and locally thinning by means of a 10:1 solution of 25% tetramethyl ammonium hydroxide (TMAH) with Isopropyl alcohol. More than 100 detectors of different thicknesses, down to 5 mu m with active areas ranging from 0.71 to 0.172 mm(2), have been fabricated. The main design considerations of our thin detectors were a very low leakage current below 12 nA and a low full depletion voltage at a reverse bias less than 1.5 V. Finally, most of our thin detectors offer an energy resolution (FWHM) as low as 31 keV for 5.487 MeV alpha particles from a Am-241 source.
Avdelning/ar
Publiceringsår
2013
Språk
Engelska
Sidor
1182-1188
Publikation/Tidskrift/Serie
IEEE Transactions on Nuclear Science
Volym
60
Issue
2
Dokumenttyp
Artikel i tidskrift
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Nano Technology
- Accelerator Physics and Instrumentation
Nyckelord
- Energy resolution
- leakage current
- silicon nanotechnology
- TMAH
- etching
- ultra-thin PIN detector
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0018-9499