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Fabrication and Characterization of Ultra-Thin PIN Silicon Detectors for Counting the Passage of MeV Ions

Författare

Summary, in English

This paper describes the fabrication and initial characterization of an ultra-thin silicon PIN detector using a new technique in silicon nanotechnology. In collaboration with the Nuclear Physics Division and the Lund Nano Lab at Lund University, we have developed and manufactured ultra thin Delta E-detectors for spectroscopic applications. The fabrication process has been carried out using a double-polished silicon substrate n-type wafer and locally thinning by means of a 10:1 solution of 25% tetramethyl ammonium hydroxide (TMAH) with Isopropyl alcohol. More than 100 detectors of different thicknesses, down to 5 mu m with active areas ranging from 0.71 to 0.172 mm(2), have been fabricated. The main design considerations of our thin detectors were a very low leakage current below 12 nA and a low full depletion voltage at a reverse bias less than 1.5 V. Finally, most of our thin detectors offer an energy resolution (FWHM) as low as 31 keV for 5.487 MeV alpha particles from a Am-241 source.

Publiceringsår

2013

Språk

Engelska

Sidor

1182-1188

Publikation/Tidskrift/Serie

IEEE Transactions on Nuclear Science

Volym

60

Issue

2

Dokumenttyp

Artikel i tidskrift

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Nano Technology
  • Accelerator Physics and Instrumentation

Nyckelord

  • Energy resolution
  • leakage current
  • silicon nanotechnology
  • TMAH
  • etching
  • ultra-thin PIN detector

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0018-9499