Adsorption of Cs on InAs(111) surfaces
Publikation/Tidskrift/Serie: Proceedings of the Eight International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures and the Thirteenth International Congress on Thin Films - ACSIN8/ICTF13 (Applied Surface Science)
Förlag: Elsevier Science B.V.
Caesiated InAs(111)B (1 x 1) and InAs(111)A (2 x 2) surfaces have been studied by photoelectron spectroscopy. On the InAs(111)B a new (root 3 x root 3)R30 degrees reconstruction was observed. During Cs evaporation remarkably small changes are observed in the lone pair states, and no sign of an accumulation layer at the surface can be observed. Instead, the additional charge provided by Cs is rapidly transported towards the bulk. On the InAs(111)A cesium behaves as a typical electropositive alkali metal donator that enhances the already existing accumulation layer. (c) 2005 Elsevier B.V. All rights reserved.
- Physical Sciences
- Natural Sciences
- indium arsenide
Eight International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures and the Thirteenth International Congress on Thin Films - ACSIN8/ICTF13
20-23 June 2005
- ISSN: 0169-4332