Vertical high-mobility wrap-gated InAs nanowire transistor

Summary, in English

In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 x 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V-ds = 0.15 V (V-g = 0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.

• Författare: Tomas Bryllert; Lars-Erik Wernersson; Linus Fröberg; Lars Samuelson
• Avdelning/ar: Fasta tillståndets fysik; Institutionen för elektro- och informationsteknik
• Publiceringsår: 2006
• Språk: Engelska
• Sidor: 323-325
• Publikation/Tidskrift/Serie: IEEE Electron Device Letters
• Volym: 27
• Issue: 5
• Länkar: http://dx.doi.org/10.1109/LED.2006.873371
• Dokumenttyp: Artikel i tidskrift
• Förlag: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Ämne: Electrical Engineering, Electronic Engineering, Information Engineering; Condensed Matter Physics
• Nyckelord: field-effect transistor (FET); wrap gate; nanowires; InAs
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0741-3106