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Vertical high-mobility wrap-gated InAs nanowire transistor

Publiceringsår: 2006
Språk: Engelska
Sidor: 323-325
Publikation/Tidskrift/Serie: IEEE Electron Device Letters
Volym: 27
Nummer: 5
Dokumenttyp: Artikel
Förlag: IEEE


In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 x 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V-ds = 0.15 V (V-g = 0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.



  • Technology and Engineering
  • field-effect transistor (FET)
  • wrap gate
  • nanowires
  • InAs


  • ISSN: 0741-3106

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