Structural investigation of GaInP nanowires using X-ray diffraction

Summary, in English

In this work the structure of ternary GaxIn1-xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 mu m are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements. (C) 2013 Elsevier B.V. All rights reserved.

• Författare: D. Kriegner; J. M. Persson; T. Etzelstorfer; Daniel Jacobsson; Jesper Wallentin; J. B. Wagner; Knut Deppert; Magnus Borgström; J. Stangl
• Avdelning/ar: Fasta tillståndets fysik; NanoLund: Centre for Nanoscience
• Publiceringsår: 2013
• Språk: Engelska
• Sidor: 100-105
• Publikation/Tidskrift/Serie: Thin Solid Films
• Volym: 543
• Länkar: http://dx.doi.org/10.1016/j.tsf.2013.02.112
• Dokumenttyp: Artikel i tidskrift
• Förlag: Elsevier
• Ämne: Condensed Matter Physics
• Nyckelord: Nanowires; X-ray diffraction; III-V semiconductors
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0040-6090