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Synthesis of Doped InP Core-Shell Nanowires Evaluated Using Hall Effect Measurements.

In English

Författare

Summary, in English

InP core-shell nanowire pn-junctions doped with Zn and Sn have been investigated in terms of growth morphology and shell carrier concentration. The carrier concentrations were evaluated using spatially resolved Hall effect measurements and show improved homogeneity compared to previous investigations, attributed to the use of Sn as the n-type dopant. Anisotropies in the growth rate of different facets are found for different doping levels that in turn affects the migration of Sn and In on the nanowire surface. A route for increasing the In migration length to obtain a more homogeneous shell thickness is presented.

Publiceringsår

2014

Språk

Engelska

Sidor

749-753

Publikation/Tidskrift/Serie

Nano Letters

Volym

14

Issue

2

Dokumenttyp

Artikel i tidskrift

Förlag

The American Chemical Society (ACS)

Ämne

  • Nano Technology

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1530-6992