Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

Summary, in English

The pre-oxidized crystalline (3 x 1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3 x 1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3 x 1)-O consists of In atoms with unexpected negative (between -0.64 and -0.47 eV) and only moderate positive (In2O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes. (C) 2015 AIP Publishing LLC.

• Författare: M. Tuominen; J. Lang; J. Dahl; M. Kuzmin; M. Yasir; J. Makela; Jacek Osiecki; Karina Schulte; M. P. J. Punkkinen; P. Laukkanen; K. Kokko
• Avdelning/ar: MAX IV-laboratoriet
• Publiceringsår: 2015
• Språk: Engelska
• Publikation/Tidskrift/Serie: Applied Physics Letters
• Volym: 106
• Issue: 1
• Länkar: http://dx.doi.org/10.1063/1.4905655
• Dokumenttyp: Artikel i tidskrift
• Förlag: American Institute of Physics (AIP)
• Ämne: Social Sciences Interdisciplinary; Other Engineering and Technologies not elsewhere specified
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0003-6951