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Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots

In English

Författare

Summary, in English

We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we ascribe to single-hole tunneling through a quantum dot in the GaSb core. As the gate voltage increases, the measured charge stability diagram indicates the appearance of an additional quantum dot, which we suggest is an electron quantum dot formed in the InAsSb shell. We find that an electron-hole interaction induces shifts of transport resonances in the source-drain voltage from which an average electron-hole interaction strength of 2.9 +/- 0.3 meV is extracted. We also carry out magnetotransport measurements of a hole quantum dot in the GaSb core and extract level-dependent g factors and a spin-orbit interaction.

Publiceringsår

2015

Språk

Engelska

Publikation/Tidskrift/Serie

Physical Review B (Condensed Matter and Materials Physics)

Volym

91

Issue

16

Dokumenttyp

Artikel i tidskrift

Förlag

American Physical Society

Ämne

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1098-0121