Intrinsic Performance of InAs Nanowire Capacitors
Författare
Summary, in English
The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small nanowire diameter, resulting in an increased carrier concentration, a shift in the threshold voltage, and a higher intrinsic capacitance. These NW capacitors may be a suitable alternative in high frequency applications approaching 100 GHz, while maintaining a quality factor above 100.
Publiceringsår
2014
Språk
Engelska
Sidor
452-459
Publikation/Tidskrift/Serie
IEEE Transactions on Electron Devices
Volym
61
Issue
2
Dokumenttyp
Artikel i tidskrift
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Nano Technology
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- nanowires (NWs)
- modeling
- Capacitor
- InAs
Status
Published
Projekt
- EIT_WWW Wireless with Wires
Forskningsgrupp
- Nano
ISBN/ISSN/Övrigt
- ISSN: 0018-9383