Resonant Tunneling Permeable Base Transistor for RF applications
Författare
Summary, in English
Publiceringsår
2003
Språk
Engelska
Sidor
487-488
Publikation/Tidskrift/Serie
2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741)
Dokumenttyp
Konferensbidrag
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
Nyckelord
- molecular beam epitaxy
- double barrier heterostructure
- room temperature
- semiconductor heterostructure
- metallic elements
- resonant tunneling permeable base transistor
- tungsten
- W
- AlGaAs-InGaAs
- 30 nm
- 293 to 298 K
- electron beam lithography
Conference name
2003 International Semiconductor Device Research Symposium
Conference date
2003-12-10 - 2003-12-12
Conference place
Washington, DC, United States
Status
Published
ISBN/ISSN/Övrigt
- ISBN: 0-7803-8139-4