A Class-AB 1.65GHz-2GHz Broadband CMOS Medium Power Amplifier

In English In this paper a single stage broadband CMOS RF power
amplifier is presented. The power amplifier is fabricated in
a 0:25¹m CMOS process. Measurements with a 2:5V supply
voltage show an output power of 18:5 dBm with an associated
PAE of 16% at the 1-dB compression point. The measured
gain is 5.1 § 0:5 dB from 1.65 to 2 GHz. Simulated
and measured results agree reasonably well.