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A Class-AB 1.65GHz-2GHz Broadband CMOS Medium Power Amplifier

Författare:
Publiceringsår: 2005
Språk: Engelska
Publikation/Tidskrift/Serie: Proceedings of Norchip 2005
Dokumenttyp: Konferensbidrag

Sammanfattning

In this paper a single stage broadband CMOS RF power
amplifier is presented. The power amplifier is fabricated in
a 0:25¹m CMOS process. Measurements with a 2:5V supply
voltage show an output power of 18:5 dBm with an associated
PAE of 16% at the 1-dB compression point. The measured
gain is 5.1 § 0:5 dB from 1.65 to 2 GHz. Simulated
and measured results agree reasonably well.

Disputation

Nyckelord

  • Technology and Engineering

Övrigt

Norchip
Oulu, Finland
Published
Yes

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