Publikationer
Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
Avdelning/ar:
Publiceringsår: 2002
Språk: Engelska
Sidor: 2
Publikation/Tidskrift/Serie: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Dokumenttyp: Konferensbidrag
Förlag: Lund Univ
Sammanfattning
We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface
Disputation
Nyckelord
- Physics and Astronomy
- selective dot nucleation
- arsine ambient
- InAs-InP
- nanoholes
- patterned InP surface
- InAs quantum dots
- As/P exchange reactions
- annealing temperature
- annealing time
- InAs/InP site controlled quantum dot growth
- electron beam prepatterning forms
- carbon nanodeposits
- growth masks
- InP surface
Övrigt
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
24-28 June 2002
Malmö, Sweden
Published
Yes
