Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
Författare
Summary, in English
Publiceringsår
2002
Språk
Engelska
Publikation/Tidskrift/Serie
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Dokumenttyp
Konferensbidrag
Förlag
Lund University
Ämne
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- selective dot nucleation
- arsine ambient
- InAs-InP
- nanoholes
- patterned InP surface
- InAs quantum dots
- As/P exchange reactions
- annealing temperature
- annealing time
- InAs/InP site controlled quantum dot growth
- electron beam prepatterning forms
- carbon nanodeposits
- growth masks
- InP surface
Conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Conference date
2002-06-24 - 2002-06-28
Conference place
Malmö, Sweden
Status
Published