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Quantative photoelectron spectromicroscopy for investigation of PMMA resist residues

Publiceringsår: 2002
Språk: Engelska
Sidor: 2
Publikation/Tidskrift/Serie: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Dokumenttyp: Konferensbidrag
Förlag: Lund Univ

Sammanfattning

We show that photoelectron spectroscopy (PES) due to its surface sensitivity can be used as a straightforward method to quantify the PMMA resist residues which remain on SiO2 surfaces after electron beam exposure and resist development. The attenuation of the SiO2 valence band and Si2p photoelectrons has been measured by using a photoelectron microscope and it has been found that correctly exposed and developed PMMA resist leaves residues with an average thickness of about 0.7 nm. Higher exposure doses result in decrease of the film thickness, but still with residues of about 0.5 nm. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices

Disputation

Nyckelord

  • Physics and Astronomy
  • Si2p photoelectrons
  • film thickness
  • SiO<sub>2</sub> valence band
  • electron beam exposure
  • SiO<sub>2</sub> surfaces
  • surface sensitivity
  • photoelectron spectromicroscopy
  • PMMA resist residues
  • attenuation
  • electronic devices technology
  • 0.7 nm
  • 0.5 nm
  • SiO<sub>2</sub>-Si
  • SiO<sub>2</sub>

Övriga

Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
24-28 June 2002
Malmö, Sweden
Published
Yes

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