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Heterointerfaces in III-V semiconductor nanowhiskers

Publiceringsår: 2002
Språk: Engelska
Sidor: 281-283
Publikation/Tidskrift/Serie: Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Dokumenttyp: Konferensbidrag
Förlag: Institute of Electrical and Electronics Engineers Inc.

Sammanfattning

We have investigated heterostructures formed within Vapor-Liquid-Solid grown III-V nanowhiskers. The growth conditions that are typical for chemical beam epitaxy facilitate the creation of atomically abrupt interfaces. In this paper we investigate the properties of heterostructure interfaces including switching of either the column-V material (As, P) or the column-III material (In, Ga).

Disputation

Nyckelord

  • Physics and Astronomy
  • Semiconductor nanowhiskers

Övriga

14th Indium Phosphide and Related Materials Conference
2014-05-13
Stockholm, Sweden
Published
Yes
  • ISSN: 1092-8669
  • CODEN: CPRMEG

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