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Coupling between lateral modes in a vertical resonant tunneling structure

Författare:
Publiceringsår: 2002
Språk: Engelska
Sidor: 950-953
Publikation/Tidskrift/Serie: Physica E
Volym: 13
Nummer: 2-4
Dokumenttyp: Artikel
Förlag: Elsevier

Sammanfattning

We present experimental results and theoretical calculations of the vertical electron transport through a laterally constricted resonant tunneling transistor. Current-voltage measurements at 4.2 K show numerous current peaks that exhibit a complex dependence on the applied gate voltage. A scattering-matrix approach combined with the Landauer formalism was used to perform quantum mechanical calculations of the electron transport through a quantum dot structure with laterally confined emitter and collector regions. The simulations qualitatively reproduce the measured data, suggesting a strong coupling between the lateral modes in the quantum dot and the collector

Disputation

Nyckelord

  • Physics and Astronomy
  • quantum dot structure
  • 4.2 K
  • vertical resonant tunneling structure
  • vertical electron transport
  • laterally constricted resonant tunneling transistor
  • lateral modes coupling
  • scattering-matrix approach
  • Landauer formalism
  • current-voltage measurements

Övriga

Published
Yes
  • ISSN: 1386-9477
  • CODEN: PELNFM

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