Publikationer
One dimensional heterostructures and resonant tunneling in III-V nanowires
Avdelning/ar:
Publiceringsår: 2003
Språk: Engelska
Sidor: 151-152
Publikation/Tidskrift/Serie: 2003 International Symposium on Compound Semiconductors (Cat. No.03TH8675)
Dokumenttyp: Konferensbidrag
Förlag: IEEE
Sammanfattning
We use a bottom-up approach to grow epitaxially nucleated semiconductor nanowires from gold particles. Heterostructure barriers of InP are introduced inside InAs nanowires to form resonant tunneling diodes and single-electron transistors
Disputation
Nyckelord
- Technology and Engineering
- III-V nanowires
- GaAs
- one dimensional heterostructures
- epitaxially nucleated semiconductor nanowires growth
- InP
- gold particles
- InP heterostructure barriers
- InAs
- resonant tunneling diodes
- single electron transistors
Övrigt
IEEE International Symposium on Compound Semiconductors
25-27 Aug. 2003
San Diego, CA, USA
Published
Yes
- ISBN: 0-7803-7820-2
