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Design of resonant tunneling permeable base transistors

Författare:
Publiceringsår: 2004
Språk: Engelska
Sidor: 158-163
Publikation/Tidskrift/Serie: 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)
Dokumenttyp: Konferensbidrag
Förlag: IEEE

Sammanfattning

We evaluate the performance of resonant tunneling permeable base transistors (RT-PBTs) by numerical simulations. Since the current is limited by the barriers, a design with a low doping level around the embedded gate wires is chosen to improve the transconductance. We evaluate the influence of the various geometrical parameters, to optimize the design for high frequency operation. We obtain a performance comparable to conventional PBTs, to which we have incorporated the tunneling characteristics

Disputation

Nyckelord

  • Technology and Engineering
  • geometrical parameters
  • transconductance
  • gate wires
  • doping level
  • permeable base transistors
  • resonant tunneling
  • high frequency operation
  • tunneling characteristics

Övriga

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings
25-27 Aug. 2003
San Diego, CA, USA
Published
Yes
  • ISBN: 0-7803-8614-0

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