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Design of resonant tunneling permeable base transistors

In English

Författare

Summary, in English

We evaluate the performance of resonant tunneling permeable base transistors (RT-PBTs) by numerical simulations. Since the current is limited by the barriers, a design with a low doping level around the embedded gate wires is chosen to improve the transconductance. We evaluate the influence of the various geometrical parameters, to optimize the design for high frequency operation. We obtain a performance comparable to conventional PBTs, to which we have incorporated the tunneling characteristics

Publiceringsår

2004

Språk

Engelska

Sidor

158-163

Publikation/Tidskrift/Serie

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)

Dokumenttyp

Konferensbidrag

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Nyckelord

  • geometrical parameters
  • transconductance
  • gate wires
  • doping level
  • permeable base transistors
  • resonant tunneling
  • high frequency operation
  • tunneling characteristics

Conference name

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings

Conference date

2003-08-25 - 2003-08-27

Conference place

San Diego, CA, United States

Status

Published

ISBN/ISSN/Övrigt

  • ISBN: 0-7803-8614-0