Vertical high mobility wrap-gated InAs nanowire transistor

In English We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm²/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of V_g = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude