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Vertical high mobility wrap-gated InAs nanowire transistor

Publiceringsår: 2005
Språk: Engelska
Sidor: 2
Publikation/Tidskrift/Serie: Device Research Conference
Dokumenttyp: Konferensbidrag
Förlag: IEEE Press


We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm2/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of Vg = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude



  • Technology and Engineering
  • wrap gated field effect transistor
  • transconductance
  • current saturation
  • sub threshold characteristics
  • InAs
  • -0.15 V
  • high mobility
  • nanowire transistor


Device Research Conference
20-22 June 2005
Santa Barbara, CA, USA
  • ISBN: 0-7803-9040-7

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