A Comparison of Two 10 GHz Beam Forming Transmitters, in 90 nm and 130 nm CMOS

In English A 10 GHz beam forming transmitter was designed in a 90 nm and a 130 nm CMOS process. Two power amplifers with independently controllable phase enable the beam forming. The controllable phase is accomplished by switching in binary weighted transistors fed by quadrature signals, which are generated by a quadrature voltage controlled oscillator followed by a buffer. The designs contain seven differential on-chip inductors. The 90 nm and 130 nm design consume a total of 44.0 mA and 52.1 mA, respectively, from a 1.2 V supply. The power amplifers deliver the desired output power of 5 dBm each at a power added effciency of 22% 90 nm and 18% 130 nm.