Phase Segregation in AlInP Shells on GaAs Nanowires
Författare
Summary, in English
We have studied morphology and phase segregation of AlInP shells on GaAs nanowires. Photoluminescence measurements on single core-
shell nanowires indicated variations in the shell composition, and phase segregation was confirmed by cross-sectional scanning transmission
electron microscopy on 30 nm thin slices of the wires. It was discovered that Al-rich domains form in the á112ñ directions where two {110}
shell facets meet during growth. We propose that the mechanism behind this phase segregation is a variation in the chemical potential along
the circumference of the nanowire together with a difference in diffusion lengths for the different growth species. From the morphology of the
core and the shell, we conclude that the side facet growth is temperature dependent forming {112} facets at low growth temperature and
{110} facets at high growth temperature
shell nanowires indicated variations in the shell composition, and phase segregation was confirmed by cross-sectional scanning transmission
electron microscopy on 30 nm thin slices of the wires. It was discovered that Al-rich domains form in the á112ñ directions where two {110}
shell facets meet during growth. We propose that the mechanism behind this phase segregation is a variation in the chemical potential along
the circumference of the nanowire together with a difference in diffusion lengths for the different growth species. From the morphology of the
core and the shell, we conclude that the side facet growth is temperature dependent forming {112} facets at low growth temperature and
{110} facets at high growth temperature
Publiceringsår
2006
Språk
Engelska
Sidor
2743-2747
Publikation/Tidskrift/Serie
Nano Letters
Volym
6
Issue
12
Länkar
Dokumenttyp
Artikel i tidskrift
Förlag
The American Chemical Society (ACS)
Ämne
- Nano Technology
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1530-6992