Measurements of the band gap of wurtzite InAs1−xPx nanowires using photocurrent spectroscopy

In English We report measurements of the band gap of InAs1−xPx nanowires having wurtzite crystal structure
as a function of the composition for 0.14 spectroscopy on single InAs nanowires with a centrally placed InAs1−xPx segment. The photocurrent
measurements are performed at a temperature of 5 K. The data fit well with a quadratic dependence
of the band gap on the composition. Using a bowing parameter of 0.2 eV the extracted values for
the band gaps are 0.54 eV for InAs and 1.65 eV for InP. These values are larger than the
corresponding zinc blende band gaps. We attribute this increase to the fact that the crystal structure
is wurtzite rather than zinc blende