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Metal oxide nanoparticles as novel gate materials for field-effect gas sensors

In English

Författare

  • S Roy
  • A Salomonsson
  • A Lloyd Spetz
  • C Aulin
  • PO Kall
  • L Ojamae
  • M Strand
  • Mehri Sanati

Summary, in English

Oxide nanoparticle layers have shown interesting behavior as gate materials for high temperature (typically at 300-400°C) metal-insulator-silicon carbide (MISiC) capacitive sensors. Distinct shifts in the depletion region of the C-V (capacitance-voltage) characteristics could be observed while switching between different oxidizing and reducing gas ambients (air, O2, H2, NH3, CO, NOx, C3H6). Shifts were also noticed in the accumulation region of the C-V curves, which can be attributed to the change in resistivity of the gate material. Sensor response patterns have been found to depend on operating temperature.

Publiceringsår

2006

Språk

Engelska

Sidor

275-278

Publikation/Tidskrift/Serie

Materials and Manufacturing Processes

Volym

21

Issue

3

Dokumenttyp

Artikel i tidskrift

Förlag

Taylor & Francis

Ämne

  • Production Engineering, Human Work Science and Ergonomics

Nyckelord

  • accumulation region
  • adsorption
  • capacitance voltage (C-V)
  • depletion region
  • field-effect
  • gas sensors
  • gate material
  • high frequency
  • high temperature
  • interface
  • metal-insulator-seimconductor (MISIC)
  • nano particles
  • ruthenium oxide
  • silicon carbide
  • transient response

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1042-6914