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Nanowire field-effect transistor

Författare:
Publiceringsår: 2007
Språk: Engelska
Sidor: 2629-2631
Publikation/Tidskrift/Serie: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volym: 46
Nummer: 4B
Dokumenttyp: Artikel
Förlag: INST PURE APPLIED PHYSICS

Sammanfattning

A new processing scheme for the fabrication of sub-100-nm-gate-length vertical nanowire transistors has been developed. InAs transistors with an 11 x 11 nanowire matrix and 80 nm gate length have been realized by this process. The gate length is directly controlled via the thickness of the evaporated gate metal and is thus easily scalable. The demonstrated devices operate in depletion mode, and they show a maximum drive current of about 1 mA and a maximum transconductance of 0.52 mS at V-g = -0.5 V and V-d = 1 V.

Disputation

Nyckelord

  • Physics and Astronomy
  • transistor
  • wrap gate
  • nanowire
  • InAs
  • MISFET

Övriga

Published
Yes
  • ISSN: 0021-4922

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