Correlation lengths in stacked InAs quantum dot systems studied by cross-sectional scanning tunnelling microscopy
Författare
Summary, in English
We have studied the influence of the InP spacer layer thickness on stacked InAs/InP quantum dots, using cross-sectional scanning tunnelling microscopy. We show that for a spacer layer thickness of up to 30 nm, the quantum dots are spatially correlated but for a separating distance of 50 nm the vertical ordering of the dots is lost. These values are the same as previously found for quantum dots in the InAs/GaAs system despite the large difference in lattice mismatch between the InAs/GaAs ( 7%) and InAs/InP ( 3%) systems. We show that the apparent similarities can be understood by a combination of intermixing in the dots and differences in dot size. Finally, we demonstrate that the size of the quantum dots is affected by their vertical correlation.
Avdelning/ar
Publiceringsår
2007
Språk
Engelska
Publikation/Tidskrift/Serie
Nanotechnology
Volym
18
Issue
14
Länkar
Dokumenttyp
Artikel i tidskrift
Förlag
IOP Publishing
Ämne
- Nano Technology
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0957-4484