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Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors

Författare:
Publiceringsår: 2007
Språk: Engelska
Publikation/Tidskrift/Serie: APPLIED PHYSICS LETTERS
Volym: 90
Nummer: 12
Dokumenttyp: Artikel
Förlag: AMER INST PHYSICS

Sammanfattning

The authors report on magnetotransport investigations of nanoscaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2 K. Magnetotransport measurements carried out at 1.8 K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which the authors interpret in terms of a switching mechanism driven by the shape anisotropy of the central wirelike Ni island. A large TMR of about 18% is observed within a finite source-drain bias regime. The TMR decreases rapidly with increasing bias, which the authors tentatively attribute to excitation of magnons in the central island. (c) 2007 American Institute of Physics.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

Published
Yes
  • ISSN: 0003-6951

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