Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors

Summary, in English

The authors report on magnetotransport investigations of nanoscaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2 K. Magnetotransport measurements carried out at 1.8 K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which the authors interpret in terms of a switching mechanism driven by the shape anisotropy of the central wirelike Ni island. A large TMR of about 18% is observed within a finite source-drain bias regime. The TMR decreases rapidly with increasing bias, which the authors tentatively attribute to excitation of magnons in the central island. (c) 2007 American Institute of Physics.

• Författare: Ruisheng Liu; H. Pettersson; L. Michalak; C. M. Canali; Dmitry Suyatin; Lars Samuelson
• Avdelning/ar: Fasta tillståndets fysik
• Publiceringsår: 2007
• Språk: Engelska
• Publikation/Tidskrift/Serie: Applied Physics Letters
• Volym: 90
• Issue: 12
• Länkar: http://dx.doi.org/10.1063/1.2714289
• Dokumenttyp: Artikel i tidskrift
• Förlag: American Institute of Physics (AIP)
• Ämne: Condensed Matter Physics
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0003-6951