Remnant magnetoresistance in ferromagnetic (Ga,Mn)As nanostructures
Publikation/Tidskrift/Serie: Applied Physics Letters
Förlag: American Institute of Physics
The authors show a magnetoresistive effect that appears in a lithographically shaped, three-arm nanostructure fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different pairs of arms in the structure, is revealed as a dependence of zero-field resistance on the direction of the previously applied magnetic field. This effect could allow designing devices with unique switching and memory properties.
- Medicine and Health Sciences
- ISSN: 0003-6951