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Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

Författare:
Publiceringsår: 2007
Språk: Engelska
Sidor:
Publikation/Tidskrift/Serie: NANOTECHNOLOGY
Volym: 18
Nummer: 1
Dokumenttyp: Artikel
Förlag: IOP PUBLISHING LTD

Sammanfattning

The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.

Disputation

Nyckelord

  • Physics and Astronomy
  • Chemistry

Övriga

Published
Yes
  • ISSN: 0957-4484

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