Optimization of Au-assisted InAs nanowires grown by MOVPE
Författare
Summary, in English
Epitaxially-grown InAs nanowires may have great potential for nanowire device applications, due to the high electron mobility and narrow direct band gap of this material. Various applications will most likely require different selected growth conditions, due to such factors as temperature-sensitive substrates or pressure-dependent intrinsic doping. However, it has been reported that InAs nanowires are more sensitive to growth conditions than nanowires of other similar III-V materials. Here we discuss the effect of growth conditions on the morphology and growth rate of InAs nanowires, with the aim of determining the optimum growth achievable under various conditions. Growth temperature, relative and absolute precursor flows, seed particle size and density, and substrate type are discussed. (c) 2006 Elsevier B.V. All rights reserved.
Avdelning/ar
Publiceringsår
2006
Språk
Engelska
Sidor
326-333
Publikation/Tidskrift/Serie
Journal of Crystal Growth
Volym
297
Issue
2
Länkar
Dokumenttyp
Artikel i tidskrift
Förlag
Elsevier
Ämne
- Condensed Matter Physics
Nyckelord
- semiconducting III-V
- nanostructures
- metalorganic vapor phase epitaxy
- material
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0022-0248