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Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

In English

Författare

  • Tao Xu
  • Kimberly Dick Thelander
  • Sebastien Plissard
  • Thanh Hai Nguyen
  • Younes Makoudi
  • Maxime Berthe
  • Jean-Philippe Nys
  • Xavier Wallart
  • Bruno Grandidier
  • Philippe Caroff

Summary, in English

III-V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs1-xSbx nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of nanofaceting morphology, atomic structure and surface composition. The complementary use of these techniques allows for correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth. The addition of even a minute amount of Sb to InAs changes the crystal structure from perfect wurtzite to perfect zinc blende, via intermediate stacking fault and pseudo-periodic twinning regimes. Moreover, the addition of Sb during the axial growth of InAs/InAs1-xSbx heterostructure nanowires causes a significant conformal lateral overgrowth on both segments, leading to the spontaneous formation of a core-shell structure, with an Sb-rich shell.

Publiceringsår

2012

Språk

Engelska

Publikation/Tidskrift/Serie

Nanotechnology

Volym

23

Issue

9

Dokumenttyp

Artikel i tidskrift

Förlag

IOP Publishing

Ämne

  • Nano Technology

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0957-4484