In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator

Summary, in English

We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.

• Författare: Mikael Egard; Mats Ärlelid; Lars Ohlsson; Mattias Borg; Erik Lind; Lars-Erik Wernersson
• Avdelning/ar: Fasta tillståndets fysik; Institutionen för elektro- och informationsteknik; NanoLund: Centre for Nanoscience
• Publiceringsår: 2012
• Språk: Engelska
• Sidor: 970-972
• Publikation/Tidskrift/Serie: IEEE Electron Device Letters
• Volym: 33
• Issue: 7
• Länkar: http://dx.doi.org/10.1109/LED.2012.2194132
• Dokumenttyp: Artikel i tidskrift
• Förlag: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Ämne: Electrical Engineering, Electronic Engineering, Information Engineering; Condensed Matter Physics
• Nyckelord: generator; pulse; metal-oxide-semiconductor field-effect transistor (MOSFET); metal-organic chemical vapor deposition regrowth; Impulse radio; InGaAs; resonant tunneling diode (RTD); ultrawideband; wavelet
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0741-3106