Webbläsaren som du använder stöds inte av denna webbplats. Alla versioner av Internet Explorer stöds inte längre, av oss eller Microsoft (läs mer här: * https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Var god och använd en modern webbläsare för att ta del av denna webbplats, som t.ex. nyaste versioner av Edge, Chrome, Firefox eller Safari osv.

Effects of aluminum on epitaxial graphene grown on C-face SiC

In English

Författare

  • Chao Xia
  • Leif I. Johansson
  • Yuran Niu
  • Lars Hultman
  • Chariya Virojanadara

Summary, in English

The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 degrees C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 degrees C to 700 degrees C induces formation of an ordered compound, producing a two domain root 7 x root 7R19 degrees LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 degrees C, and at 1000 degrees C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000 degrees C. (C) 2015 Author(s).

Publiceringsår

2015

Språk

Engelska

Publikation/Tidskrift/Serie

Applied Physics Reviews

Volym

117

Issue

19

Dokumenttyp

Artikel i tidskrift

Förlag

American Institute of Physics (AIP)

Ämne

  • Materials Chemistry

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1931-9401