Structural investigation of GaInP nanowires using X-ray diffraction
Författare
Summary, in English
In this work the structure of ternary GaxIn1-xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 mu m are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements. (C) 2013 Elsevier B.V. All rights reserved.
Publiceringsår
2013
Språk
Engelska
Sidor
100-105
Publikation/Tidskrift/Serie
Thin Solid Films
Volym
543
Dokumenttyp
Artikel i tidskrift
Förlag
Elsevier
Ämne
- Condensed Matter Physics
Nyckelord
- Nanowires
- X-ray diffraction
- III-V semiconductors
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0040-6090