Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface
Publikation/Tidskrift/Serie: Applied Physics Reviews
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics
We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.
- Natural Sciences
- Physical Sciences
- ISSN: 0021-8979