Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Summary, in English

Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729929]

• Författare: Jesper Wallentin; Laura Barrutia Poncela; Anna M. Jansson; Kilian Mergenthaler; Martin Ek; Daniel Jacobsson; Reine Wallenberg; Knut Deppert; Lars Samuelson; Dan Hessman; Magnus Borgström
• Avdelning/ar: Fasta tillståndets fysik; Centrum för analys och syntes; NanoLund: Centre for Nanoscience
• Publiceringsår: 2012
• Språk: Engelska
• Publikation/Tidskrift/Serie: Applied Physics Letters
• Volym: 100
• Issue: 25
• Fulltext: - 782 kB; Download statistics
• Länkar: http://dx.doi.org/10.1063/1.4729929
• Dokumenttyp: Artikel i tidskrift
• Förlag: American Institute of Physics (AIP)
• Ämne: Condensed Matter Physics; Chemical Sciences
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0003-6951