The structure of <1 1 1 > B oriented GaP nanowires

Summary, in English

Nanowires of zinc blende crystal structure, grown in the < 111 > B direction usually have a large number of twin plane defects. In order to investigate this phenomenon, we grow GaP nanowires with metal-organic vapor phase epitaxy. By rotating the nanowires in a high resolution transmission electron microscope, we show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets. Due to the alternating orientations of these twin octahedra, the sidewalls of the nanowires can be described as microfaceted surfaces with an overall orientation of 11 1 2}, but composed of alternating 11 1 I}A and {1 I 1}B facets. Moreover, the segment thicknesses follow exponential distributions, which show that there is a certain probability of twin plane formation, which is independent of segment thickness. (c) 2006 Elsevier B.V. All rights reserved.

• Författare: Jonas Johansson; Lisa Karlsson; Patrik Svensson; Thomas Mårtensson; Brent Wacaser; Knut Deppert; Lars Samuelson
• Avdelning/ar: Fasta tillståndets fysik; Centrum för analys och syntes
• Publiceringsår: 2007
• Språk: Engelska
• Sidor: 635-639
• Publikation/Tidskrift/Serie: Journal of Crystal Growth
• Volym: 298
• Länkar: http://dx.doi.org/10.1016/j.jcrysgro.2006.10.175
• Dokumenttyp: Artikel i tidskrift
• Förlag: Elsevier
• Ämne: Condensed Matter Physics; Chemical Sciences
• Nyckelord: metalorganic vapor phase epitaxy; nanomaterials; crystal morphology; planar defects
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0022-0248