Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.

Summary, in English

Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.

• Författare: Michael D Thompson; Aiyeshah Alhodaib; Adam P Craig; Alex Robson; Atif Aziz; Anthony Krier; Johannes Svensson; Lars-Erik Wernersson; Ana M Sanchez; Andrew R J Marshall
• Avdelning/ar: Institutionen för elektro- och informationsteknik
• Publiceringsår: 2016
• Språk: Engelska
• Sidor: 182-187
• Publikation/Tidskrift/Serie: Nano Letters
• Volym: 16
• Issue: 1
• Länkar: http://dx.doi.org/10.1021/acs.nanolett.5b03449
• Dokumenttyp: Artikel i tidskrift
• Förlag: The American Chemical Society (ACS)
• Ämne: Nano Technology
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 1530-6992