Wrap-gated InAs nanowire field-effect transistor
Författare
Summary, in English
Publiceringsår
2005
Språk
Engelska
Sidor
273-276
Publikation/Tidskrift/Serie
International Electron Devices Meeting 2005
Dokumenttyp
Konferensbidrag
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
Nyckelord
- optical lithography
- lattice constants
- 0.15 V
- InAs
- heterostructures design
- lateral strain relaxation
- drain induced barrier lowering
- gate coupling
- semiconductor nanowires
- wrap gated nanowire
- field effect transistor
Conference name
International Electron Devices Meeting 2005
Conference date
2005-12-05 - 2005-12-07
Conference place
Washington, DC, United States
Status
Published
ISBN/ISSN/Övrigt
- ISBN: 0-7803-9268-X