RF and DC Analysis of Stressed InGaAs MOSFETs
Författare
Summary, in English
Publiceringsår
2014
Språk
Engelska
Sidor
181-183
Publikation/Tidskrift/Serie
IEEE Electron Device Letters
Volym
35
Issue
2
Fulltext
- Available as PDF - 324 kB
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Dokumenttyp
Artikel i tidskrift
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc., IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- high-k
- InGaAs
- MOSFET
- reliablity
- RF
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0741-3106