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Confinement in Thickness-Controlled GaAs Polytype Nanodots.

In English

Författare

Summary, in English

Polytype nanodots are arguably the simplest nanodots than can be made, but their technological control was, up to now, challenging. We have developed a technique to produce nanowires containing exactly one polytype nanodot in GaAs with thickness control. These nanodots have been investigated by photoluminescence, which has been cross-correlated with transmission electron microscopy. We find that short (4-20 nm) zincblende GaAs segments/dots in wurtzite GaAs confine electrons and that the inverse system confines holes. By varying the thickness of the nanodots we find strong quantum confinement effects which allows us to extract the effective mass of the carriers. The holes at the top of the valence band have an effective mass of approximately 0.45 m0 in wurtzite GaAs. The thinnest wurtzite nanodot corresponds to a twin plane in zincblende GaAs and gives efficient photoluminescence. It binds an exciton with a binding energy of roughly 50 meV, including central cell corrections.

Publiceringsår

2015

Språk

Engelska

Sidor

2652-2656

Publikation/Tidskrift/Serie

Nano Letters

Volym

15

Issue

4

Dokumenttyp

Artikel i tidskrift

Förlag

The American Chemical Society (ACS)

Ämne

  • Nano Technology
  • Condensed Matter Physics

Status

Published

Forskningsgrupp

  • Neuronano Research Center (NRC)

ISBN/ISSN/Övrigt

  • ISSN: 1530-6992