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Charging control of InP/GaInP quantum dots by heterostructure design

In English

Författare

Summary, in English

Semiconductor quantum dots are often charged due to accumulation from a doped host material. Using low-temperature photoluminescence, we have studied the charging of single self-assembled InP dots in structures designed to control the electron population in a weakly n-type environment. By using designed heterostructures to position the Fermi level of the structure, not requiring electric fields or currents, we show that the electron accumulation can be reduced from approximately 18 electrons in the dot to approximately 8 electrons. In particular, we show that the single quantum dot luminescence spectrum of the Fermi-level pinned structure perfectly matches the low-energy part of the highly charged reference spectrum, a phenomenon predicted by the model for multiple charging of quantum dots. (C) 2004 American Institute of Physics.

Publiceringsår

2004

Språk

Engelska

Sidor

5043-5045

Publikation/Tidskrift/Serie

Applied Physics Letters

Volym

85

Issue

21

Dokumenttyp

Artikel i tidskrift

Förlag

American Institute of Physics (AIP)

Ämne

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0003-6951