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Defect structure of Ga1-xMnxAs: A cross-sectional scanning tunneling microscopy study

In English

Författare

Summary, in English

We have studied the atomic scale structure of molecular beam epitaxy grown Ga1-xMnxAs compounds with various Mn concentrations by cross-sectional scanning tunneling microscopy and first principles calculations. Only bright protrusions close to the top layer As atoms are directly correlated with the bulk Mn concentration. Atomically resolved filled and empty states images of this defect are compared to images derived from first principles calculations. We identify the Mn related defect as substitutional Mn in the second layer Ga site. Surprisingly no substitutional Mn is observed in the top-most Ga layer. The experimental results are consistent with the energetics of our first principles total energy calculations.

Publiceringsår

2004

Språk

Engelska

Publikation/Tidskrift/Serie

Physical Review B (Condensed Matter and Materials Physics)

Volym

70

Issue

8

Dokumenttyp

Artikel i tidskrift

Förlag

American Physical Society

Ämne

  • Natural Sciences
  • Atom and Molecular Physics and Optics
  • Physical Sciences

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1098-0121