Meny

Javascript is not activated in your browser. This website needs javascript activated to work properly.
Du är här

Defect structure of Ga1-xMnxAs: A cross-sectional scanning tunneling microscopy study

Publiceringsår: 2004
Språk: Engelska
Publikation/Tidskrift/Serie: Physical Review B
Volym: 70
Nummer: 8
Dokumenttyp: Artikel
Förlag: American Physical Society

Sammanfattning

We have studied the atomic scale structure of molecular beam epitaxy grown Ga1-xMnxAs compounds with various Mn concentrations by cross-sectional scanning tunneling microscopy and first principles calculations. Only bright protrusions close to the top layer As atoms are directly correlated with the bulk Mn concentration. Atomically resolved filled and empty states images of this defect are compared to images derived from first principles calculations. We identify the Mn related defect as substitutional Mn in the second layer Ga site. Surprisingly no substitutional Mn is observed in the top-most Ga layer. The experimental results are consistent with the energetics of our first principles total energy calculations.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

Published
Yes
  • ISSN: 1098-0121

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen