Meny

Javascript verkar inte påslaget? - Vissa delar av Lunds universitets webbplats fungerar inte optimalt utan javascript, kontrollera din webbläsares inställningar.
Du är här

Quantum-dot-induced ordering in GaxIn1-xP/InP islands

Författare:
Publiceringsår: 2002
Språk: Engelska
Sidor:
Publikation/Tidskrift/Serie: PHYSICAL REVIEW B
Volym: 66
Nummer: 23
Dokumenttyp: Artikel
Förlag: AMERICAN PHYSICAL SOC

Sammanfattning

Thin layers of GaxIn1-xP grown on top of self-assembled InP quantum dots has been studied using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and low-temperature scanning tunneling luminescence (STL). STM reveals that the overgrowth is highly uneven, in which elongated GaxIn1-xP islands covering the dots are formed. TEM and high-spatial-resolution STL show that the quantum dots locally induce domains with higher degree of ordering in the islands. The luminescence from these domains is observed as a strong GaxIn1-xP peak at an energy below the emission from the GaxIn1-xP barrier material.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

Published
Yes
  • ISSN: 1098-0121

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen