Quantum-dot-induced ordering in GaxIn1-xP/InP islands
Publikation/Tidskrift/Serie: PHYSICAL REVIEW B
Förlag: AMERICAN PHYSICAL SOC
Thin layers of GaxIn1-xP grown on top of self-assembled InP quantum dots has been studied using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and low-temperature scanning tunneling luminescence (STL). STM reveals that the overgrowth is highly uneven, in which elongated GaxIn1-xP islands covering the dots are formed. TEM and high-spatial-resolution STL show that the quantum dots locally induce domains with higher degree of ordering in the islands. The luminescence from these domains is observed as a strong GaxIn1-xP peak at an energy below the emission from the GaxIn1-xP barrier material.
- Physics and Astronomy
- ISSN: 1098-0121