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Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires

In English

Författare

Summary, in English

We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter approximate to 30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy. S Online supplementary data available from stacks.iop.org/Nano/22/185201/mmedia

Publiceringsår

2011

Språk

Engelska

Publikation/Tidskrift/Serie

Nanotechnology

Volym

22

Issue

18

Dokumenttyp

Artikel i tidskrift

Förlag

IOP Publishing

Ämne

  • Nano Technology

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0957-4484