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Directed growth of branched nanowire structures

In English

Författare

Summary, in English

We describe the production of hierarchical branched nanowire structures by the sequential seeding of multiple wire generations with metal nanoparticles. Such complex structures represent the next step in the study of functional nanowires, as they increase the potential functionality of nanostructures produced in a self-assembled way. It is possible, for example, to fabricate a variety of active heterostructure segments with different compositions and diameters within a single connected structure. The focus of this work is on epitaxial III-V semiconductor branched nanowire structures, with the two materials GaP and InAs used as typical examples of branched structures with cubic (zinc blende) and hexagonal (wurtzite) crystal structures. The general morphology of these structures will be described, as well as the relationship between morphology and crystal structure.

Publiceringsår

2007

Språk

Engelska

Sidor

127-133

Publikation/Tidskrift/Serie

MRS Bulletin

Volym

32

Issue

2

Dokumenttyp

Artikel i tidskrift

Förlag

Materials Research Society

Ämne

  • Condensed Matter Physics
  • Chemical Sciences

Nyckelord

  • Nanotechnology
  • semiconductors
  • crystal structure
  • Nanowires
  • electron microscopy

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1938-1425