Dissociative NH3 adsorption on the Si(100)2 × 1 surface at 300 K
Författare
Summary, in English
High resolution electron energy loss spectroscopy has been used to determine how NH3 adsorbs on the Si(100)2 × 1 surface at 300 K. We find that the NH3 molecules dissociate into NH2 and H on adsorption. Combination bands, overtones and double losses for the Si---NH2 group are observed. An anneal to 800 K is sufficient to dissociate the adsorbed NH2 groups while the majority of the Si---H bonds remain intact. An anneal to 1100 K is enough to break the Si-H bonds and start the formation of silicon nitride.
Publiceringsår
1991
Språk
Engelska
Sidor
353-356
Publikation/Tidskrift/Serie
Surface Science
Volym
241
Issue
3
Dokumenttyp
Artikel i tidskrift
Förlag
Elsevier
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
Status
Published
Forskningsgrupp
- Electromagnetic theory
ISBN/ISSN/Övrigt
- ISSN: 0039-6028