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Heterogeneous integration of InAs on W/GaAs by MOVPE

In English

Författare

Summary, in English

InAs has been grown on W-GaAs patterned substrates using MOVPE. The selectivity of the growth and the nucleation process has been studied as a function of the temperature and the V/III-ratio in the MOVPE reactor. It is shown that the W guides the nucleation of the InAs on the GaAs and that the islands formed may be used to embed metal features in a hybride InAs/GaAs structure in agreement with previous overgrowth studies of W-InAs and W-GaAs. The electrical properties has also been evaluated demonstrating a reduction of resistance by a factor 5 for a hybride structure with an embedded grating as compared to an InAs/GaAs reference sample.

Publiceringsår

2008

Språk

Engelska

Sidor

042043-042043

Publikation/Tidskrift/Serie

Journal of Physics: Conference Series

Volym

100

Dokumenttyp

Konferensbidrag

Förlag

IOP Publishing

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Conference name

17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology

Conference date

2007-07-02 - 2007-07-06

Conference place

Stockholm, Sweden

Status

Published

Forskningsgrupp

  • Nano

ISBN/ISSN/Övrigt

  • ISSN: 1742-6588
  • ISSN: 1742-6596