Low power multi-band CMOS receiver front-end
Författare
Summary, in English
A Multi-band CMOS front-end was designed and fabricated in a 0.13μm CMOS process. The front-end employs a common-gate low noise amplifier (LNA) with
capacitive cross coupling (CCC) technique and a double balanced mixer. The band selection is performed by switching capacitors in and out of the LNA load, changing the resonance frequencies ranging from 2.5GHz to 4.5GHz in
16 different frequency bands. The measured noise figure is from 2.8dB in the higher bands to 4dB in lower bands. The conversion gain ranges from 20dB in the higher bands down to 14.5dB in the lower bands, and the third order intercept point (IIP3) is above -14dBm. The input matching S11 is well
below -10dB at all frequencies. The front-end draws 3.85mA from a 1.2V power supply.
capacitive cross coupling (CCC) technique and a double balanced mixer. The band selection is performed by switching capacitors in and out of the LNA load, changing the resonance frequencies ranging from 2.5GHz to 4.5GHz in
16 different frequency bands. The measured noise figure is from 2.8dB in the higher bands to 4dB in lower bands. The conversion gain ranges from 20dB in the higher bands down to 14.5dB in the lower bands, and the third order intercept point (IIP3) is above -14dBm. The input matching S11 is well
below -10dB at all frequencies. The front-end draws 3.85mA from a 1.2V power supply.
Avdelning/ar
Publiceringsår
2010
Språk
Engelska
Publikation/Tidskrift/Serie
[Host publication title missing]
Dokumenttyp
Konferensbidrag
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- capacitive crosscoupling
- multi-band
- LNA
- mixer
Conference name
PRIME 2010, 6th Conference on Ph.D. Research in Microelectronics & Electronics
Conference date
2010-07-18 - 2010-07-21
Conference place
Berlin, Germany
Status
Published
Forskningsgrupp
- Elektronikkonstruktion
- Analog RF
- Data converters & RF