Development of a Vertical Wrap-Gated InAs FET
Publikation/Tidskrift/Serie: IEEE Transactions on Electron Devices
Dokumenttyp: Artikel i tidskrift
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.
In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control in situ doping, high-kappa dielectric deposition, spacer layer formation: and metal wrap-gate fabrication. In particular, we compare a few alternative methods for deposition of materials onto vertical structures and discuss their potential advantages and limitations. Finally, we also present a comparison of transistor performance for nanowires grown using two different epitaxial techniques.
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
- Field-effect transistor (FET)
- wrap gate
- surround gate
- ISSN: 0018-9383